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| HAT1026R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-457 D (Z) 5th. Edition June. 1996 Features * * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 8 5 76 56 7 8 DD D D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 HAT1026R Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)Note1 Ratings -30 20 -7 -56 -7 2.5 150 -55 to +150 Unit V V A A A W C C Body-drain diode reverse drain current IDR Channel dissipation Channel temperature Storage temperature Note: Pch Note2 Tch Tstg 1. PW 10s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current IGSS IDSS -- -- -1.0 -- -- 8 -- -- -- -- -- -- -- -- -- -- -- 0.028 0.04 12 1700 1000 190 60 330 80 120 -0.9 10 -10 -2.5 0.037 0.065 -- -- -- -- -- -- -- -- -1.4 A A V S pF pF pF ns ns ns ns V IF = -7A, VGS = 0 VGS = 16V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10V, I D = -1mA ID = -4A, VGS = -10V Note3 ID = -4A, VGS = -4V Note3 ID = -4A, VDS = -10V Note3 VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -4A VDD A -10V V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Symbol Min Typ -- Max -- Unit V Test Conditions ID = -10mA, VGS = 0 V(BR)DSS -30 Gate to source cutoff voltage VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test trr td(on) tr td(off) tf VDF -- 70 -- ns IF = -7A, VGS = 0 diF/ dt =20A/s HAT1026R Main Characteristics Power vs. Temperature Derating 4.0 -100 Maximum Safe Operation Area 10 s 100 s Pch (W) I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 -30 -10 -3 PW D C 1 m = s 10 m Channel Dissipation Drain Current s O pe 2.0 -1 -0.3 -0.1 -0.03 1.0 Operation in this area is limited by R DS(on) Ta = 25 C 1 shot Pulse 0 50 100 150 Ta (C) 200 -0.01 -0.01 -0.03 -0.1 -0.3 -1 Ambient Temperature Drain to Source Voltage Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) ra tio n (P -3 W 4 e) ot s N 10 < -10 -30 -100 V DS (V) I D (A) (A) Typical Output Characteristics -10V -8 V -50 -6 V -4.5 V -5 V -40 Pulse Test -30 -4 V Typical Transfer Characteristics -50 Tc = -25C -40 25C 75C ID Drain Current -30 Drain Current -20 -3.5 V -20 -10 -3 V VGS = -2.5 V -10 V DS = -10 V Pulse Test 0 -2 -4 -6 Gate to Source Voltage -10 -8 V GS (V) 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) HAT1026R Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance R DS(on) ( ) 0.5 -0.5 Pulse Test Pulse Test 0.2 0.1 -0.4 Drain to Source Voltage -0.3 0.05 VGS = -4 V -0.2 I D = -5 A -2 A -1 A -8 -10 V GS (V) 0.02 0.01 -10 V -0.1 0.005 0 -2 -4 -6 Gate to Source Voltage -0.2 -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 0.08 I D = -1, -2, -5 A 0.06 V GS = -4 V 0.04 -1, -2, -5 A 0.02 0 -40 -10 V Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.10 50 Forward Transfer Admittance vs. Drain Current 20 Tc = -25 C 10 25 C 5 2 1 0.5 -0.2 75 C V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) 0 40 80 120 160 Case Temperature Tc (C) HAT1026R Body-Drain Diode Reverse Recovery Time 10000 3000 1000 300 100 30 10 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Crss Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss 500 Reverse Recovery Time trr (ns) 100 50 20 10 di/dt = 20 A/s V GS = 0, Ta = 25C 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) Capacitance C (pF) 200 Dynamic Input Characteristics Switching Characteristics V DS (V) V GS (V) 0 Switching Time t (ns) -10 V DD = -5 V -10 V -25 V 0 1000 500 200 tf 100 50 t d(off) t d(on) V GS = -4 V, V DD = -10 V PW = 3 s, duty < 1 % -0.5 -1 -2 -5 Drain Current I D (A) -10 tr -4 Drain to Source Voltage -20 V GS V DD = -25 V -10 V -5 V I D = -7 A 0 V DS -8 -30 -12 -40 -50 -16 -20 80 Gate to Source Voltage 20 10 -0.1 -0.2 16 32 48 64 Gate Charge Qg (nc) HAT1026R Reverse Drain Current vs. Souece to Drain Voltage -50 Reverse Drain Current I DR (A) -40 V GS = -5 V 0, 5 V -30 -20 -10 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 Tc = 25C 0.1 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) * ch - f ch - f = 83.3 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) ls pu e PDM PW T 0.001 1sh ot D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) HAT1026R Package Dimentions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi Code FP-8DA -- EIAJ MS-012AA JEDEC |
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